tuning varactor high q silicon hyperabrupt junction tuning varactor 12-39 vol. 1 high q silicon hyperabrupt junction tuning varactor description this series of silicon tuning varactors consists of hyperabrupt epitaxial devices. they incorporate a passivated mesa technology. packaged or chip devices are available for linear electronic tuning from vhf up to ku band. characteristics @ ta = +25 c reverse breakdown voltage, vb = @ 10 ?: 20 v min. reverse current, ir @ 16 v: 200 na figure of total capacitance (pf) tuning merit (q) ct ratio test f = 50 mhz f = 1 mhz f = 1 mhz f = 1 mhz f = 1 mhz ct1v/ct12v ct1v/ct20v conditions vr = 4 v vr = 1 v vr = 4 v vr = 12 v vr = 20 v f = 1 mhz f = 1 mhz type case (1) typ. typ. 20% typ. typ. typ. typ. chip dh76010 f27d 2200 2.5 1.2 0.6 0.5 4.1 4.9 eh76010 dh76015 f27d 2000 3.6 1.7 0.8 0.7 4.4 5.4 eh76015 dh76022 f27d 1700 5.2 2.4 1.1 0.9 4.7 5.8 eh76022 dh76033 f27d 1400 7.7 3.5 1.6 1.3 4.9 6.1 eh76033 dh76047 f27d 1000 11 4.9 2.2 1.7 5.0 6.4 eh76047 dh76068 f27d 700 16 6.9 3.0 2.4 5.1 6.5 eh76068 DH76100 f27d 400 23 10.2 4.5 3.5 5.2 6.7 eh76100 dh76150 f27d 140 34 15.2 6.6 5.1 5.2 6.8 eh76150 (1) custom cases available on request temperature ranges: operating junction (t j ) : -55 c to +150 c storage : -65 c to +150 c typical junction capacitance reverse voltage vr (v) 0.10 1.00 0.1 0.01 100 100.00 c j (pf) profils in cj 76010 76015 76022 76033 76047 76068 76100 76150 10 10.00 sales offices: visit our web site at http://www.temex.com
|
